Study of the switching characteristics of PLT(10) thin films

Citation
Dh. Chang et al., Study of the switching characteristics of PLT(10) thin films, J KOR PHYS, 38(3), 2001, pp. 277-281
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
0374-4884 → ACNP
Volume
38
Issue
3
Year of publication
2001
Pages
277 - 281
Database
ISI
SICI code
0374-4884(200103)38:3<277:SOTSCO>2.0.ZU;2-Z
Abstract
A PLT(10) thin film has been deposited on a Pt/TiOx/SiO2/Si substrate by us ing the sol-gel method, and its switching characteristics have been investi gated for various top electrode areas, input pulse voltages,, and load resi stances. As the external input pulse voltage increases from 2 V to 5 V, the switching time decreases from 0.49 mus to 0.12 mus. The activation energy (E-a) is obtained as 209 kV/cm from the relation between the switching time and the applied pulse voltage. The switched charge densities at 5 V, as ob tained from the hysteresis loop and the polarization switching, are 11.69 m uC/cm(2) and 13.02 muC/cm(2), respectively, which agree relatively well wit h each other and, show a difference of 10 %. As the top electrode area incr eases from 3.14 x 10(-4) cm(2) to 5.03 x 10(-3) cm(2), the switching time i ncreases from 0.12 mus to 1.88 mus. As load resistance increases from 50 Om ega to 3.3 k Omega, switching time increases from 0.12 mus to 9.7 mus. Thes e switching characteristics indicate that a PLT(10) thin film can be well a pplied in nonvolatile memory devices.