Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope

Citation
Ck. Hyon et al., Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope, J KOR PHYS, 38(3), 2001, pp. 251-254
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
0374-4884 → ACNP
Volume
38
Issue
3
Year of publication
2001
Pages
251 - 254
Database
ISI
SICI code
0374-4884(200103)38:3<251:SPOIQD>2.0.ZU;2-O
Abstract
A selective positioning technique for InAs quantum dots (QDs) on an atomic force microscope (AFM)-patterned GaAs substrate has been proposed and imple mented. AFM direct patterning was used to generate various patterns having line widths of several tens of nanometers; then, InAs QDs were grown by usi ng the metalorganic chemical vapor deposition technique. A nonuniform distr ibution bf QDs was observed near the patterns, and the detailed shape of th e QD distribution and the sizes of the QDs depended on the spacing and the width of the patterns. The growth condition for the case where the QDs coul d be aligned along the patterns was found in our work.