Co silicide field emitter arrays formed from Ti/Co layers

Citation
Jd. Lee et al., Co silicide field emitter arrays formed from Ti/Co layers, J KOR PHYS, 38(3), 2001, pp. 210-214
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
0374-4884 → ACNP
Volume
38
Issue
3
Year of publication
2001
Pages
210 - 214
Database
ISI
SICI code
0374-4884(200103)38:3<210:CSFEAF>2.0.ZU;2-1
Abstract
For enhancement and stabilization of electron emission, Co silicides were f ormed from Co, Co/Ti and Ti/Co layers on single crystal silicon (c-Si) fiel d emitter arrays (FEAs). Since Ti prevents oxygen adsorption on the Co film during silicidation, uniform and smooth Co silicide layers could be obtain ed by depositing Co first and then Ti on silicon tips, followed by rapid an nealing. Among Co silicide FEAs, Co silicide formed from Ti/Co bi-layers sh owed the lowest leakage current, the highest failure voltage over 152 V and the largest anode current over 1 mA at the gate voltage of 150 V. Compared with silicon field emitters, the silicide FEAs formed from Ti/Co layers ex hibited a significant improvement in maximum emission current, emission cur rent fluctuation and stability, and failure voltage.