Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures

Citation
Tw. Kim et al., Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures, J PHYS CH S, 62(4), 2001, pp. 711-715
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
0022-3697 → ACNP
Volume
62
Issue
4
Year of publication
2001
Pages
711 - 715
Database
ISI
SICI code
0022-3697(200104)62:4<711:MAIPOT>2.0.ZU;2-X
Abstract
A new approach has been introduced for the fabrication of Ru/p-InP(100) het erostructures with the goal of producing stable Ru contacts and sharp Ru/p- InP heterointerfaces. Atomic force microscopy and X-ray diffraction measure ments showed that the Ru film layers grown on InP substrates were polycryst alline thin films with very smooth surfaces. Auger electron spectroscopy an d Rutherford backscattering measurements showed that the composition of the as-grown film was Ru and that the Ru/InP interface quality was relatively good. Transmission electron microscopy and selected-area electron-diffracti on measurements showed that the grown Ru film was a polycrystalline layer w ith small grain domains. These results can help improve understanding for t he application of Ru/InP heterostructures in high-speed metal-semiconductor field-effect transistors. (C) 2001 Elsevier Science Ltd. All rights reserv ed.