A novel diffusion barrier using oxygen stopping layer for high density FRAM

Citation
Yj. Song et al., A novel diffusion barrier using oxygen stopping layer for high density FRAM, INTEGR FERR, 31(1-4), 2000, pp. 351-358
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
1058-4587 → ACNP
Volume
31
Issue
1-4
Year of publication
2000
Pages
351 - 358
Database
ISI
SICI code
1058-4587(2000)31:1-4<351:ANDBUO>2.0.ZU;2-N
Abstract
A novel diffusion barrier was successfully developed by using an oxygen sto pping layer between Ir barrier films. The oxygen stopping layer was generat ed by inserting a Ti layer between Ir films, which results in the sandwiche d form of Ir/Ti/Ir multi-layer. The diffusion barrier properties were enhan ced by refraining oxygen from penetrating into polysilicon plug, which migh t be attributed to the reaction of oxygen with the Ir-Ti layer. It was conf irmed in Auger depth profile that the oxygen was well localized in the stop ping layer after annealing at 700 degreesC for 10 min in O-2 ambient. The m ulti-stack barrier exhibited low contact resistance of 320 and 650 ohm for contact size of 0.6x0.6 and 0.4x0.4 mum(2), respectively. The PZT films pre pared on Pt/IrO2/Ir-Ti-Ir/poly substrate shows remnant polarization of 20 m uC/cm(2) and coercive voltage of 1.2V at 5V. It was demonstrated that this novel barrier can solve barrier contact problem occurred in high density 16 Mb FRAM.