Characterization of SrBi2Ta2O9 films prepared by metalorganic decomposition using rapid thermal annealing

Citation
Hq. Ling et al., Characterization of SrBi2Ta2O9 films prepared by metalorganic decomposition using rapid thermal annealing, INTEGR FERR, 33(1-4), 2001, pp. 253-259
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
1058-4587 → ACNP
Volume
33
Issue
1-4
Year of publication
2001
Pages
253 - 259
Database
ISI
SICI code
1058-4587(2001)33:1-4<253:COSFPB>2.0.ZU;2-T
Abstract
The SrBi2Ta2O9 (SBT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by metalorganic decomposition method. The films were annealed layer by lu) rr at 650-800 degreesC for 3minutes in oxygen using rapid thermal annealin g. The structure, morphology and electrical properties of as-deposited film s were characterized using X-ray diffraction, atomic force microscope. Auge r electron spectroscopy and some electrical measurement. The films showed s maller grains. higher density. less interfacial diffusion and smaller remna nt polarization than those annealed in conventional tube furnace. The remna nt polarization and coercive field at applied voltage of 3V were 8.7 muC/cm (2) and 13.4kV/cm. respectively. fur the 440nm-thick films annealed at 750 degreesC. The coercive field was much lower than those reported previously. This is advantageous to low voltage applications in nonvolatile memory. Th e films also exhibited no fatigue after 10(10) cycles switching and no loss after 10(5)s retention time.