N. Soyama et al., Improvement of process stability for PZT thin films formation by using modified sol-gel solutions, INTEGR FERR, 33(1-4), 2001, pp. 227-234
Pb(Zr,Ti)O-3 (PZT) thin films were prepared from conventional and modified
sol-gel solutions with various Pb contents on Pt/SiO2/Si substrate and eval
uated. Comparing relationships between surface morphology of the PZT films
derived from the solutions and Pb content in the solutions, same tendency t
hat nano-crystalline secondary phase began to generate on surface of PZT fi
lms when the Pb content decreased was observed. However, the modified solut
ions had much wider window to produce PZT perovskite films without the seco
ndary phase, namely good electrical properties. This was because nucleation
density in PZT gel films was different between two solutions. The origin o
f the difference was discussed. For mass production of high density FeRAM,
the control of the microstructure is key to stabilize the properties. By us
ing modified sol-gel solutions, process stability for PZT films preparation
was improved.