Improvement of process stability for PZT thin films formation by using modified sol-gel solutions

Citation
N. Soyama et al., Improvement of process stability for PZT thin films formation by using modified sol-gel solutions, INTEGR FERR, 33(1-4), 2001, pp. 227-234
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
1058-4587 → ACNP
Volume
33
Issue
1-4
Year of publication
2001
Pages
227 - 234
Database
ISI
SICI code
1058-4587(2001)33:1-4<227:IOPSFP>2.0.ZU;2-Y
Abstract
Pb(Zr,Ti)O-3 (PZT) thin films were prepared from conventional and modified sol-gel solutions with various Pb contents on Pt/SiO2/Si substrate and eval uated. Comparing relationships between surface morphology of the PZT films derived from the solutions and Pb content in the solutions, same tendency t hat nano-crystalline secondary phase began to generate on surface of PZT fi lms when the Pb content decreased was observed. However, the modified solut ions had much wider window to produce PZT perovskite films without the seco ndary phase, namely good electrical properties. This was because nucleation density in PZT gel films was different between two solutions. The origin o f the difference was discussed. For mass production of high density FeRAM, the control of the microstructure is key to stabilize the properties. By us ing modified sol-gel solutions, process stability for PZT films preparation was improved.