Monolithically integrated micromachined RF MEMS capacitive switches

Citation
Jy. Park et al., Monolithically integrated micromachined RF MEMS capacitive switches, SENS ACTU-A, 89(1-2), 2001, pp. 88-94
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
0924-4247 → ACNP
Volume
89
Issue
1-2
Year of publication
2001
Pages
88 - 94
Database
ISI
SICI code
0924-4247(20010320)89:1-2<88:MIMRMC>2.0.ZU;2-E
Abstract
RF MEMS switches are newly designed and fabricated with various structural geometry of transmission line, hinge, and movable plate formed by using ele ctroplating techniques, low temperature processes, and dry releasing techni ques. In particular, strontium titanate oxide (SrTiO3) with high dielectric constant is investigated for high switching on/off ratio and on capacitanc e as a dielectric layer of a micromechanical capacitive switch. Achieved lo west actuation voltage of the fabricated switches is 8 V. The fabricated sw itch has low insertion loss of 0.08 dB at 10 GHz, isolation of 42 dB at 5 G Hz. on/off ratio of 600, and on capacitance of 50 pF, respectively. (C) 200 1 Elsevier Science B.V. All rights reserved.