Diamond synthesis by plasma jet above a liquid surface

Citation
T. Suzuki et al., Diamond synthesis by plasma jet above a liquid surface, J EUR CERAM, 21(3), 2001, pp. 331-334
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
0955-2219 → ACNP
Volume
21
Issue
3
Year of publication
2001
Pages
331 - 334
Database
ISI
SICI code
0955-2219(200103)21:3<331:DSBPJA>2.0.ZU;2-P
Abstract
A new approach was proposed for the low-pressure diamond synthesis on high- resistant substrates using liquids as starting materials for carbon sources . The principle is to generate a DC plasma between the copper nozzle and th e negatively-biased liquid surface under reduced pressure. The discharge co ntinued with an applied voltage between 1.5 and 2 kV and at pressures betwe en 30 and 50 kPa using a mixture of water- ethylene glycol solution. Plasma thus generated was led onto the silicon substrate placed horizontally and 1 mm over the nozzle top. The deposits distributed almost concentrically ce ntered at the point directly above the nozzle axis. After deposition for 1 h, well-faceted diamond was formed in a limited region. The growth rate of the diamond film was 10 mum/h. (C) 2001 Elsevier Science Ltd. All rights re served.