Slow crack growth behavior in Si3N4 sintered with Yb2Si2O7 tie-line composition additives

Citation
Hj. Choi et al., Slow crack growth behavior in Si3N4 sintered with Yb2Si2O7 tie-line composition additives, J EUR CERAM, 21(4), 2001, pp. 471-475
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
0955-2219 → ACNP
Volume
21
Issue
4
Year of publication
2001
Pages
471 - 475
Database
ISI
SICI code
0955-2219(200104)21:4<471:SCGBIS>2.0.ZU;2-P
Abstract
Slow crack growth behavior of two gas pressure sintered Si3N4 ceramics with different additives; a Yb2Si2O7 composition and an Al2O3-Y2O3 composition, was investigated by constant stress-rate ("dynamic fatigue") testing at 14 00 degreesC. The slow crack growth parameter. n, was 14.7 and 6.3 for Si3N4 With Yb2Si2O7 and Al2O3-Y2O3 compositions, respectively. Superior crack gr owth resistance of Si3N4 with Yb2Si2O7 composition was due to its higher re fractoriness of intergranular glassy films, compared to Si3N4 with Al2O3-Y2 O3 composition. (C) 2001 Elsevier Science Ltd. All rights reserved.