High energy Si ion irradiation effects on 10 nm thick oxide MOS capacitors

Citation
A. Candelori et al., High energy Si ion irradiation effects on 10 nm thick oxide MOS capacitors, J NON-CRYST, 280(1-3), 2001, pp. 193-201
Citations number
36
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
0022-3093 → ACNP
Volume
280
Issue
1-3
Year of publication
2001
Pages
193 - 201
Database
ISI
SICI code
0022-3093(200102)280:1-3<193:HESIIE>2.0.ZU;2-T
Abstract
We investigated the charge trapping properties of 10 nm thick oxide metal-o xide-semiconductor capacitors after 158 MeV silicon ion beam exposure up to 20 Mrad(Si) dose. Devices were biased during irradiation by a positive or negative gate voltage to drift radiation induced holes to the silicon/oxide and gate/oxide interface, respectively. Experimental results show that the radiation induced effective positive charge increases linearly with dose a nd is larger for the positive biased devices. The positive charge recombine s with electrons injected in the oxide by Fowler-Nordheim tunnelling. After positive charge recombination a net negative charge builds up, due to elec tron trapping in radiation induced neutral defects. The negative charge den sity increases linearly with dose and it is larger for positive biased devi ces. The negative charge centroid is close to the oxide centre. The probabi lity that one effective negative charge is generated by one radiation induc ed effective positive charge is 0.153 +/- 0.005. (C) 2001 Elsevier Science B.V. All rights reserved.