Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As

Citation
T. Hayashi et al., Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As, APPL PHYS L, 78(12), 2001, pp. 1691-1693
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
78
Issue
12
Year of publication
2001
Pages
1691 - 1693
Database
ISI
SICI code
0003-6951(20010319)78:12<1691:EOLAOT>2.0.ZU;2-I
Abstract
We report improvements in the crystallinity of a III-V-based diluted magnet ic semiconductor (Ga, Mn)As by heat treatment (annealing) after growth at c omparatively low temperatures. This method can be used to raise the Curie t emperature to 100 K without the need for severe optimization of growth cond itions, as well as to adjust the material parameters to desired values. (C) 2001 American Institute of Physics.