We report improvements in the crystallinity of a III-V-based diluted magnet
ic semiconductor (Ga, Mn)As by heat treatment (annealing) after growth at c
omparatively low temperatures. This method can be used to raise the Curie t
emperature to 100 K without the need for severe optimization of growth cond
itions, as well as to adjust the material parameters to desired values. (C)
2001 American Institute of Physics.