Temperature dependent transport properties in GaN, A1(x)Ga(1-x)N, and InxGa1-xN semiconductors

Citation
Afm. Anwar et al., Temperature dependent transport properties in GaN, A1(x)Ga(1-x)N, and InxGa1-xN semiconductors, IEEE DEVICE, 48(3), 2001, pp. 567-572
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
0018-9383 → ACNP
Volume
48
Issue
3
Year of publication
2001
Pages
567 - 572
Database
ISI
SICI code
0018-9383(200103)48:3<567:TDTPIG>2.0.ZU;2-B
Abstract
Ensemble Monte Carlo simulation is used to determine the electron saturatio n velocity and low-field mobility for AlxGa1-xN and InxGa1-xN. Acoustic pho non, optical phonon, intervalley, ionized impurity, alloy, and piezoelectri c scattering are included in the simulation. Doping concentration ranging f rom 10(17) cm(-3) to 10(19) cm(-3) is considered in the temperature range o f 50 K to 500 K, Theoretical calculation shows excellent agreement with low -field mobility experimental data. Empirical expressions for low field mobi lity and saturation velocity are provided as functions of temperature, dopi ng concentration and mole fraction.