Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

Citation
Bs. Shelton et al., Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition, IEEE DEVICE, 48(3), 2001, pp. 490-494
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
0018-9383 → ACNP
Volume
48
Issue
3
Year of publication
2001
Pages
490 - 494
Database
ISI
SICI code
0018-9383(200103)48:3<490:SAGACO>2.0.ZU;2-N
Abstract
The selective area growth (SAG) and properties of AlGaN/GaN heterojunction bipolar transistors (HBTs) grown by low-pressure metalorganic chemical vapo r deposition (MOCVD) are described and analyzed. Transistors based on group m-nitride material are attractive for high-power and high-temperature appl ications, Much work has been focused on improving p-type material, as well as heterojunction interfaces. However, there have been very few reports on HBTs operating at room temperature. At this time, current gains for nitride -based HBTs have been limited to similar to 10. Selective area regrowth was applied to the growth of AlGaN/GaN HBTs to analyze its potential advantage s as compared to more traditional growth techniques in order to realize imp roved electrical performance of the devices.