Zeeman spin splittings in semiconductor nanostructures - art. no. 085310

Citation
R. Kotlyar et al., Zeeman spin splittings in semiconductor nanostructures - art. no. 085310, PHYS REV B, 6308(8), 2001, pp. 5310
Citations number
34
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
0163-1829 → ACNP
Volume
6308
Issue
8
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010215)6308:8<5310:ZSSISN>2.0.ZU;2-W
Abstract
A systematic theoretical and experimental study of Zeeman spin splittings a nd g factors in semiconductor nanostructures is given. Six-band effective-m ass calculations of electron, hole, and exciton spin splittings are made an d are shown to account for experimental results presented here on In0.10Ga0 .90As/GaAs systems for the size dependences of g factors in deep-etched qua ntum dots and wires and for the magnetic-field dependences of the Zeeman sp littings in quantum wells. These effects are traced to band mixing, and an analytic form of the results is given that connects these two effects and d escribes their dependences on dimensionality.