Ultraviolet light amplification within a nanometer-sized layer - art. no. 081104

Citation
S. Asaka et al., Ultraviolet light amplification within a nanometer-sized layer - art. no. 081104, PHYS REV B, 6308(8), 2001, pp. 1104
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
0163-1829 → ACNP
Volume
6308
Issue
8
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010215)6308:8<1104:ULAWAN>2.0.ZU;2-S
Abstract
Light amplification in the ultraviolet region is confirmed in mixed rubidiu m-cesium chloride crystals at room temperature. The probe laser light, whic h falls on the 275-nm band of Auger-free luminescence (AFL) arising from ra diative transition of the Cl 3p valence electrons into the Cs 5p core holes , is enhanced in intensity when the deep-lying Rb 4p core electrons are pum ped into the conduction band by undulator radiation from an electron storag e ring. The obtained enhancement factor roughly corresponds to an amplifica tion coefficient of 7 x 10(3) cm(-1), which is much higher than those of ty pical solid-state lasers. It is emphasized that the amplification of AFL oc curs in a surface layer as thin as about 20 nm, and that the inverted popul ation between the valence and core bands is realized with any pump power. T he present observation provides us with a new possibility of nanolaser fabr ication.