Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy

Citation
Js. Wang et al., Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy, J VAC SCI B, 19(1), 2001, pp. 202-206
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
19
Issue
1
Year of publication
2001
Pages
202 - 206
Database
ISI
SICI code
1071-1023(200101/02)19:1<202:GOIQWO>2.0.ZU;2-8
Abstract
The growth of InAsN/InGaAs(P) quantum wells (QWs) on InP substrates by gas- source molecular-beam epitaxy and a rf plasma nitrogen source is reported f or the first time. The double crystal x-ray diffraction satellite peaks of the InAsN/InGaAsP multiple quantum well (MQW) samples are sharper than thos e of the pure InAs/InGaAsP MQW samples, showing that a flatter heterointerf ace is achieved due to the smaller lattice mismatch. However, broadening of the satellite peaks and degradation of the photoluminescence (PL) intensit y due to the increase of the nitrogen composition in these InAsN/InGaAsP MQ Ws suggest the existence of defects introduced by the small diameter nitrog en atoms located on arsenic sites. The PL result also shows that the peak e nergy decreases as the nitrogen composition increases. The estimated transi tion energy shrinkage coefficient is -31 meV/at.% nitrogen. The largest nit rogen composition obtained in this study is 5.9%, and its 10 K PL peak wave length is similar to2.6 mum (480 meV). The effects of growth temperature on nitrogen composition and PL intensity are also discussed. (C) 2001 America n Vacuum Society.