K. Omichi et al., Growth of ZnO thin films exhibiting room-temperature ultraviolet emission by means of atmospheric pressure vapor-phase epitaxy, J MAT CHEM, 11(2), 2001, pp. 262-263
Atmospheric pressure vapor-phase epitaxy of ZnO thin films using ZnI2 and O
-2 as starting materials has been examined: thin films of ZnO deposited ont
o sapphire (0001) substrates at 1023 K have smooth surfaces free from crack
s; the photoluminescence spectra of the ZnO thin film prepared under atmosp
heric pressure show for the first time an ultraviolet emission centered at
381.0 nm at room temperature.