Growth of ZnO thin films exhibiting room-temperature ultraviolet emission by means of atmospheric pressure vapor-phase epitaxy

Citation
K. Omichi et al., Growth of ZnO thin films exhibiting room-temperature ultraviolet emission by means of atmospheric pressure vapor-phase epitaxy, J MAT CHEM, 11(2), 2001, pp. 262-263
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS CHEMISTRY
ISSN journal
0959-9428 → ACNP
Volume
11
Issue
2
Year of publication
2001
Pages
262 - 263
Database
ISI
SICI code
0959-9428(2001)11:2<262:GOZTFE>2.0.ZU;2-V
Abstract
Atmospheric pressure vapor-phase epitaxy of ZnO thin films using ZnI2 and O -2 as starting materials has been examined: thin films of ZnO deposited ont o sapphire (0001) substrates at 1023 K have smooth surfaces free from crack s; the photoluminescence spectra of the ZnO thin film prepared under atmosp heric pressure show for the first time an ultraviolet emission centered at 381.0 nm at room temperature.