Study on the intermixing of GaAs/AlGaAs asymmetrical coupling double quantum well with photoluminescence spectra

Citation
Zl. Miao et al., Study on the intermixing of GaAs/AlGaAs asymmetrical coupling double quantum well with photoluminescence spectra, J INF M W, 20(1), 2001, pp. 15-19
Citations number
19
Language
CHINESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
1001-9014 → ACNP
Volume
20
Issue
1
Year of publication
2001
Pages
15 - 19
Database
ISI
SICI code
1001-9014(200102)20:1<15:SOTIOG>2.0.ZU;2-J
Abstract
GaAs/AlGaAs asymmetrical coupling double quantum wells (ACDQW) were grown w ith MBE with the combinative implantation method , and several areas of cou pling quantum well with different implantation ion of As+ and H+ and differ ent ion doses in single wafer were obtained. Without rapid thermal annealin g procedure, maximum difference of transition energy of intersubbands of 10 0meV was found from the photoluminescence spectra measured at room temperat ure. During the implantation process, the energy shift caused by combinativ e implanation was found to be larger than that caused by ion implantation i ndividually.