Critical thickness of crystallization and discontinuous change in ferroelectric behavior with thickness in ferroelectric polymer thin films

Citation
Qm. Zhang et al., Critical thickness of crystallization and discontinuous change in ferroelectric behavior with thickness in ferroelectric polymer thin films, J APPL PHYS, 89(5), 2001, pp. 2613-2616
Citations number
26
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
89
Issue
5
Year of publication
2001
Pages
2613 - 2616
Database
ISI
SICI code
0021-8979(20010301)89:5<2613:CTOCAD>2.0.ZU;2-X
Abstract
We report on the observation of the critical thickness of crystallization o f ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer thin films, which were solution spun cast on platinum coated silicon wafer. The effect occurs at about 100 nm thickness, which is significantly above any c urrently known spatial dimensions of the polymer, so that for films at thic kness below about 100 nm, the crystallization process is strongly hindered, resulting in a low crystallinity in these films. This low crystallinity le ads to a large and discontinuous change of the dielectric constant and ferr oelectric polarization in the films below the critical thickness. (C) 2001 American Institute of Physics.