Preferred orientation controlled giant grain growth of platinum thin filmson SiO2/Si substrates

Citation
Ds. Lee et al., Preferred orientation controlled giant grain growth of platinum thin filmson SiO2/Si substrates, JPN J A P 2, 40(1AB), 2001, pp. L1-L3
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
1AB
Year of publication
2001
Pages
L1 - L3
Database
ISI
SICI code
0021-4922(20010115)40:1AB<L1:POCGGG>2.0.ZU;2-#
Abstract
Platinum thin films were deposited by reactive magnetron sputtering on SiO2 /Si substrates. Argon-oxygen sputtering gas mixtures were used to control t he microstructure and the preferred orientation of platinum films. As the o xygen fraction in the sputtering gas increased, the preferred orientation o f as-deposited film was changed from (111) to random orientation. Post-sput tering anneal was done at 750-1,000 degreesC range in air ambient to study the effects of the incorporated oxygen on the grain growth behaviors of pla tinum films. After sputtering and anneal at optimum conditions, the 1-mum t hick Pt films completely transformed to giant grains with sizes as large as several millimeters. Furthermore, the preferred orientation of the giant g rains could be controlled to either (111) or (200).