Infuence of crystallinity on the bulk laser-induced damage threshold and absorption of laser light in CsLiB6O10 crystals

Citation
T. Kamimura et al., Infuence of crystallinity on the bulk laser-induced damage threshold and absorption of laser light in CsLiB6O10 crystals, JPN J A P 2, 40(2A), 2001, pp. L111-L113
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
2A
Year of publication
2001
Pages
L111 - L113
Database
ISI
SICI code
0021-4922(20010201)40:2A<L111:IOCOTB>2.0.ZU;2-0
Abstract
The relationships among the bulk laser-induced damage threshold (LIDT), dis location density and absorption of laser light in CsLiB6O10 (CLBO) were inv estigated. A newly developed synthesis process allows the growth of CLBO cr ystals with a LIDT of 2.5-fold higher than that grown by the conventional t op-seeded solution growth (TSSG) technique. High-quality CLBO possesses low er dislocation density (6.6 x 10(3)/cm(2)) than conventional CLBO (similar to 15.0 x 10(3)/cm(2)). The absorption of laser light in CLBO was character ized by measuring the temperature increase on the crystal output surface du ring the generation of fourth-harmonic (@266 nm) light of Nd:YAG lasers. At a UV power of 5 W, the maximum temperature increase was 6 degreesC for hig h-quality CLBO, which was similar to 30% lower than that generated on conve ntional CLBO crystal. Thus, the reduction of dislocation density can suppre ss the absorption of laser light, which helps to enhance the resistance of CLBO against laser induced damage and alleviate thermal dephasing during th e high-power generation of UV light.