Band alignment of molecular-beam-epitaxy-grown GaS/GaAs structure using a single [(t-Bu)GaS](4) precursor

Citation
N. Okamoto et al., Band alignment of molecular-beam-epitaxy-grown GaS/GaAs structure using a single [(t-Bu)GaS](4) precursor, JPN J A P 2, 40(2A), 2001, pp. L104-L107
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
2A
Year of publication
2001
Pages
L104 - L107
Database
ISI
SICI code
0021-4922(20010201)40:2A<L104:BAOMGS>2.0.ZU;2-5
Abstract
We report on the band alignment of a molecular-beam-epitaxy (MBE)-grown GaS /GaAs structure using a single tertiarybutylgallium sulfide cubane [(t-Bu)G aS](4) precursor. The optical band gap of epitaxial GaS film grown at a gro wth temperature (Ts) of 500 degreesC is estimated by spectroscopic ellipsom etry to be 2.7 eV, whereas that of amorphous GaS film grown at a T-S of 350 degreesC is only 2.2 eV. X-ray photoemission spectroscopy (XPS) was used t o estimate the band discontinuity between GaS and GaAs. Consequently, epita xial and amorphous GaS/GaAs structures, respectively, reveal straggling typ e-I and staggered type-II band alignments.