Near-infrared photoluminescence and electroluminescence of neodymium(III),erbium(III), and ytterbium(III) complexes

Citation
Y. Kawamura et al., Near-infrared photoluminescence and electroluminescence of neodymium(III),erbium(III), and ytterbium(III) complexes, JPN J A P 1, 40(1), 2001, pp. 350-356
Citations number
67
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
1
Year of publication
2001
Pages
350 - 356
Database
ISI
SICI code
0021-4922(200101)40:1<350:NPAEON>2.0.ZU;2-8
Abstract
Tris(dibenzoylmethanato)(monobathophenanthroline)lanthanide(III) complex [L n(DBM)(3) bath (Ln: Nd, Er and Yb)] both in solutions and thin films at roo m temperature showed narrow band photoluminescence (PL) due to the S-S tran sitions in the near-IR region: 890, 1070 and 1350 nm for Nd(III), 980 and 1 540 nm for Er(III), and 985 nm for Yb(III). The PL efficiencies in solution were determined [phi (PL) = 3.3 x 10(-3) for Nd(III), 7.0 x 10(-5) for Er( III), and 1.4 x 10(2) for Yb(III)]. Organic electroluminescent (EL) devices having the structure of glass substrate/indium-tin oxide/N,N'-diphenyl-N.N '-di(m-tolyl)benzidine/ Ln(DBM)(3)bath(Ln: Nd, Er and Yb)/bathocuproine/Mg: Ag/Ag were fabricated, giving the EL bands around 900-1600 nm at room tempe rature. The external near-IR EL efficiencies at low current density were es timated by comparing with that of the Eu(III) device having the same struct ure. The saturation of near-IR EL intensity observed at the high current de nsity suggested that the near-IR EL should suffer the T-T annihilation.