Conformality of chemical-vapor-deposited tungsten on TiN prepared by metal-organic chemical vapor deposition via cyclic plasma treatment

Citation
Sh. Whang et al., Conformality of chemical-vapor-deposited tungsten on TiN prepared by metal-organic chemical vapor deposition via cyclic plasma treatment, JPN J A P 1, 40(1), 2001, pp. 265-268
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
1
Year of publication
2001
Pages
265 - 268
Database
ISI
SICI code
0021-4922(200101)40:1<265:COCTOT>2.0.ZU;2-O
Abstract
The conformality of the chemical-vapor-deposited (CVD) W films is investiga ted with TIN films prepared by chemical vapor deposition using tetrakis-dim ethylamino-titanium (TDMAT). Plasma treatment of TDMAT-TiN films is shown t o he unsuccessful at removing volatile impurities from side-wall films. The conformality of CVD W films is improved with thinner TDMAT-TiN films and w ith a low contact aspect ratio. Based on the results of chemical analysis a nd annealing experiments, we deduce that outgassing from the TiN film on th e side wall of holes strongly affects the conformality of CVD W films. Vola tile impurities in the TiN film lead to slower growth of W films on the sid e-wall than on the top of the holes, which results in the deterioration of the conformality of W films.