Analysis of probe signal power dependence of all-optical wavelength converter using semiconductor optical amplifiers

Citation
Sm. Shin et al., Analysis of probe signal power dependence of all-optical wavelength converter using semiconductor optical amplifiers, JPN J A P 1, 40(1), 2001, pp. 159-164
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
1
Year of publication
2001
Pages
159 - 164
Database
ISI
SICI code
0021-4922(200101)40:1<159:AOPSPD>2.0.ZU;2-Q
Abstract
We analyzed the influence of the probe signal power on the wavelength conve rsion in an interferometric all optical wavelength converter using semicond uctor optical amplifiers (SOAs). The carrier density variation inside an SO A due to longitudinal signal amplification and nonradiative recombination i s investigated and the following variation of amplified spontaneous emissio n (ASE) is considered. In case of using a high probe signal power, the freq uency response of the wavelength converter and bit error rate (BER) of the converted signal are improved as a result of the reductions of ASE noise an d carrier lifetime.