Improvement of channel mobility for trench metal-oxide-semiconductor fieldeffect transistor by smoothing trench sidewall surface

Citation
A. Yahata et al., Improvement of channel mobility for trench metal-oxide-semiconductor fieldeffect transistor by smoothing trench sidewall surface, JPN J A P 1, 40(1), 2001, pp. 116-117
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
1
Year of publication
2001
Pages
116 - 117
Database
ISI
SICI code
0021-4922(200101)40:1<116:IOCMFT>2.0.ZU;2-Q
Abstract
Channel mobility (mu (eff)) for a trench metal-oxide-semiconductor field ef fect transistor (MOSFET) can be significantly enhanced by smoothing the tre nch sidewall surface. A smoothed sample showed an increased mu (eff) value. 520 cm(2)/Vs. at an effective electric held (E-ff) of 2.7 x 10(5) V/cm. wh ich was almost equal to that of a planar MOSFET. although it showed slightl y smaller values in higher E-ff regions.