Channel mobility (mu (eff)) for a trench metal-oxide-semiconductor field ef
fect transistor (MOSFET) can be significantly enhanced by smoothing the tre
nch sidewall surface. A smoothed sample showed an increased mu (eff) value.
520 cm(2)/Vs. at an effective electric held (E-ff) of 2.7 x 10(5) V/cm. wh
ich was almost equal to that of a planar MOSFET. although it showed slightl
y smaller values in higher E-ff regions.