Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode

Citation
A. Kaneta et al., Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode, JPN J A P 1, 40(1), 2001, pp. 110-111
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
1
Year of publication
2001
Pages
110 - 111
Database
ISI
SICI code
0021-4922(200101)40:1<110:SIOPIA>2.0.ZU;2-#
Abstract
Spatial distribution of photoluminescence (PL) spectra has been assessed in an InCaN single quantum well (SQW)-based light-emitting diode structure by near-held optical microscopy under the illumination-collection mode. The o btained FL mapping image revealed a variation in both peak and intensity of PL spectra according to the probing location with a scale less than about 200 nm. The variation in PL intensity is from 0.8 to 1.8 in arbitrary units indicating that the internal quantum efficiency fluctuates from 10% to 50% within the active layer.