Strain effects and atomic arrangements of 60 degrees and 90 degrees dislocations near the ZnTe/GaAs heterointerface

Citation
Tw. Kim et al., Strain effects and atomic arrangements of 60 degrees and 90 degrees dislocations near the ZnTe/GaAs heterointerface, APPL PHYS L, 78(10), 2001, pp. 1409-1411
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
78
Issue
10
Year of publication
2001
Pages
1409 - 1411
Database
ISI
SICI code
0003-6951(20010305)78:10<1409:SEAAAO>2.0.ZU;2-3
Abstract
Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS ) measurements were carried out to characterize the composition of ZnTe fil ms, and transmission electron microscopy (TEM) measurements were performed to investigate the lattice mismatch and the microstructural properties of t he ZnTe/GaAs heterostructures. The AES and SIMS results showed that the ZnT e/GaAs heterointerfaces had relatively sharp interfaces. The TEM images and the selected-area electron-diffraction patterns showed a large lattice mis match between the ZnTe epitaxial layer and the GaAs substrate, 60 degrees a nd 90 degrees dislocations together with stacking faults, near the ZnTe/GaA s heterointerface. The ZnTe epitaxial film grown on the GaAs substrate rece ives a compressive strain of -0.61%, and possible atomic arrangements of th e 60 degrees and the 90 degrees dislocations are presented on the basis of the high-resolution TEM results. (C) 2001 American Institute of Physics.