New organic bistable films for ultrafast electric memories

Citation
Zy. Hua et al., New organic bistable films for ultrafast electric memories, APPL SURF S, 169, 2001, pp. 447-451
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
169
Year of publication
2001
Pages
447 - 451
Database
ISI
SICI code
0169-4332(20010115)169:<447:NOBFFU>2.0.ZU;2-W
Abstract
Thin films which have electrical bistable effects are mostly metal-organic complexes and/or organic-organic (all-organic) complexes. Very recently som e simple (mono-molecular) organic materials have been discovered which have bistable states at room temperature, too. The threshold voltage across the se organic films with a thickness of 60 nm is 4-6 V and the transition time is 5-10 ns. Therefore, they are suitable to make ultrafast, non-volatile, organic memories (WORM or EPROM). Another possible application for an STM t ype ultrahigh-capacity memory is also illustrated. (C) 2001 Elsevier Scienc e B.V. All rights reserved.