Photoreflectance spectroscopy of vertically coupled InGaAs/GaAs double quantum dots

Citation
G. Sek et al., Photoreflectance spectroscopy of vertically coupled InGaAs/GaAs double quantum dots, SOL ST COMM, 117(7), 2001, pp. 401-406
Citations number
31
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
0038-1098 → ACNP
Volume
117
Issue
7
Year of publication
2001
Pages
401 - 406
Database
ISI
SICI code
0038-1098(2001)117:7<401:PSOVCI>2.0.ZU;2-R
Abstract
Photoreflectance and high excitation photoluminescence spectra have been me asured at 10 K for In0.6Ga0.4As/GaAs double quantum dot structures with var ious thicknesses of the GaAs separating layer. Several transitions between split states, due to the dot-dot and wetting layer well-well interaction, h ave been observed. The transitions have been identified using the results o f the effective mass approximation calculations for double quantum wells an d lens-shaped double quantum dots. The splitting energy of the quantum dot transitions has been obtained as function of the GaAs barrier width. (C) 20 01 Elsevier Science Ltd. All rights reserved.