Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride

Citation
Nm. Park et al., Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride, PHYS REV L, 86(7), 2001, pp. 1355-1357
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
0031-9007 → ACNP
Volume
86
Issue
7
Year of publication
2001
Pages
1355 - 1357
Database
ISI
SICI code
0031-9007(20010212)86:7<1355:QCIASQ>2.0.ZU;2-G
Abstract
Amorphous silicon quantum dots (a-Si QDs) were grown in a silicon nitride f ilm by plasma enhanced chemical vapor deposition. Transmission electron mic rographs clearly demonstrated that tr-Si QDs were formed in the silicon nit ride. Photoluminescence and optical absorption energy measurement of cl-Si QDs with various sizes revealed that tuning of the photoluminescence emissi on from 2.0 to 2.76 eV is possible by controlling the size of the tr-Si QD. Analysis also showed that the photoluminescence peak energy E was related to the size of the a-Si QD, a (nm) by E(eV) = 1.56 + 2.40/a(2). which is a clear evidence for the quantum confinement effect in a-Si QDs.