Observation of an energy dependence of the radiation damage on standard and oxygenated silicon diodes by 16, 21, and 27 MeV protons

Citation
J. Wyss et al., Observation of an energy dependence of the radiation damage on standard and oxygenated silicon diodes by 16, 21, and 27 MeV protons, NUCL INST A, 457(3), 2001, pp. 595-600
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
457
Issue
3
Year of publication
2001
Pages
595 - 600
Database
ISI
SICI code
0168-9002(20010121)457:3<595:OOAEDO>2.0.ZU;2-7
Abstract
First measurement of the energy dependence of the radiation damage induced by low-energy protons on standard and oxygen enriched diodes is presented. The current damage constant alpha is always insensitive to the oxygen conte nt and increases for lower energy protons, whereas the acceptor creation ra te beta for both types of diodes slowly decreases for lower proton energies , this effect being amplified when the fluences are normalized to their 1 M eV neutron equivalent values. The dependence from the proton energy of the normalized beta values is in open disagreement with the currently accepted NIEL hypothesis. Irradiations and measurements have been performed at the I NFN Laboratorio Nazionale di Legnaro. (C) 2001 Elsevier Science B.V. All ri ghts reserved.