67-GHz static frequency divider using 0.2-mu m self-aligned SiGeHBTs

Citation
K. Washio et al., 67-GHz static frequency divider using 0.2-mu m self-aligned SiGeHBTs, IEEE MICR T, 49(1), 2001, pp. 3-8
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
0018-9480 → ACNP
Volume
49
Issue
1
Year of publication
2001
Pages
3 - 8
Database
ISI
SICI code
0018-9480(200101)49:1<3:6SFDU0>2.0.ZU;2-0
Abstract
A 67-GHz 1/4 static frequency divider using 0.2-mum self-aligned selective- epitaxial-growth SiGe heterojunction bipolar transistors, with a 122-GHz cu toff frequency, a 163-GHz maximum oscillation frequency, and an average emi tter coupled logic gate delay time of 5.65 ps, was developed. The pretracki ng master-slave toggle flip-flop OMS-TFF) of the divider increases the maxi mum operating frequency to about 15% higher than that of a conventional MS- TFF, yet the power consumption of the divider is 175 mW, which is 1/5 that of comparable dividers, at a supply voltage of -5.2 V.