A lattice gas model of II-VI(001) semiconductor surfaces

Citation
M. Biehl et al., A lattice gas model of II-VI(001) semiconductor surfaces, EUROPH LETT, 53(2), 2001, pp. 169-175
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
EUROPHYSICS LETTERS
ISSN journal
0295-5075 → ACNP
Volume
53
Issue
2
Year of publication
2001
Pages
169 - 175
Database
ISI
SICI code
0295-5075(200101)53:2<169:ALGMOI>2.0.ZU;2-1
Abstract
We introduce an anisotropic two-dimensional lattice gas model of metal-term inated II-VI(001) semiconductor surfaces. Important properties of this clas s of materials are represented by effective NN and NNN interactions, which results in the competition of two vacancy structures on the surface. We dem onstrate that the experimentally observed transition from the dominant c(2 x 2) ordering of the CdTe(001) surface to a local (2 x 1) arrangement of Cd atoms can be explained as a phase transition in thermal equilibrium. The m odel is studied by means of transfer-matrix and Monte Carlo techniques. The analysis shows that the small energy difference of the competing reconstru ctions determines to a large extent the nature of the different phases. Pos sible implications for further experimental research are discussed.