Application of organic monolayers formed on Si(111): possibilities for nanometer-scale patterning

Citation
T. Yamada et al., Application of organic monolayers formed on Si(111): possibilities for nanometer-scale patterning, ELECTROCH C, 3(2), 2001, pp. 67-72
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMISTRY COMMUNICATIONS
ISSN journal
1388-2481 → ACNP
Volume
3
Issue
2
Year of publication
2001
Pages
67 - 72
Database
ISI
SICI code
1388-2481(200102)3:2<67:AOOMFO>2.0.ZU;2-7
Abstract
The modification of hydrogen-terminated Si(1 1 1) wafer surfaces was reprod uced by previously reported methods of the electrolysis of para-substituted benzendiazonium salts and the Grignard reaction with various alkyl moietie s. The electrolysis methods formed partially ordered two-dimensional monola yers, which were however obscured by precipitation of by-products. The Grig nard reaction deposited a monolayer of moieties of alkyl groups randomly ar ranged, which are more suitable for surface passivation. Aiming for the app lication to nanometer-scale monolayer patterning of the Si(1 1 1) wafer sur face, the organic-monolayer-covered Si(1 1 1) surfaces were subjected to el ectron beam bombardment. After electron bombardment with ambient O-2 or H2O introduced, adsorption of oxygen was observed within the beam spot. By imm ersing the bombarded specimen into an aqueous NiSO4 + (NH4)(2)SO4 solution, the oxygen-deposited portions selectively included Ni atoms. This will be useful in constructing nanometer-scale metallic structures over Si wafer su rfaces. (C) 2001 Elsevier Science B.V. All rights reserved.