Atomic arrangements and formation mechanisms of the CuPt-type ordered structure in CdxZn1-xTe epilayers grown on GaAs substrates

Citation
Tw. Kim et al., Atomic arrangements and formation mechanisms of the CuPt-type ordered structure in CdxZn1-xTe epilayers grown on GaAs substrates, APPL PHYS L, 78(7), 2001, pp. 922-924
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
78
Issue
7
Year of publication
2001
Pages
922 - 924
Database
ISI
SICI code
0003-6951(20010212)78:7<922:AAAFMO>2.0.ZU;2-C
Abstract
Selected area electron diffraction pattern (SADP) and transmission electron microscopy (TEM) measurements were carried out to investigate the ordered structure in CdxZn1-xTe epitaxial layers grown on (001) GaAs substrates. Th e SADP showed to sets of superstructure reflections with symmetrical intens ities, and the corresponding high-resolution TEM image showed a doublet per iodicity in the contrast of the {111} lattice planes. The results of the SA DP and the TEM measurements showed the existence of a CuPt-type ordered str uctured in the CdxZn1-xTe epitaxial layers. This CuPt-type ordered structur e had two different variants with an antiphase boundary existing between th e two variants. The formation of a CuPt-type ordered structure in a CdxZn1- xTe epitaxial layer might originate from the minimization of the strain rel axation energy in the reconstructed GaAs (001) surface. A possible atomic a rrangement of and a formation mechanism for the CuPt-type ordered structure in the CdxZn1-xTe epitaxial layer are presented based on the TEM results. These results provide important information on the microstructural properti es for improving the efficiencies of optoelectronic devices operating in bl ue-green spectral regions. (C) 2001 American Institute of Physics.