Significant effects of the distance between the cyanine dye skeleton and the semiconductor surface on the photoelectrochemical properties of dye-sensitized porous semiconductor electrodes

Citation
K. Sayama et al., Significant effects of the distance between the cyanine dye skeleton and the semiconductor surface on the photoelectrochemical properties of dye-sensitized porous semiconductor electrodes, NEW J CHEM, 25(2), 2001, pp. 200-202
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Chemistry
Journal title
NEW JOURNAL OF CHEMISTRY
ISSN journal
1144-0546 → ACNP
Volume
25
Issue
2
Year of publication
2001
Pages
200 - 202
Database
ISI
SICI code
1144-0546(2001)25:2<200:SEOTDB>2.0.ZU;2-Y
Abstract
The incident photon-to-current conversion efficiency (IPCE) of a porous TiO 2 electrode sensitized by cyanine dyes increased with decreasing distance b etween the skeleton of the dye and the TiO2 surface. The photocurrent of ox ide semiconductor electrodes sensitized by a cyanine dye increased with the positive shift of the conduction band potential of the oxide semiconductor in the following order: Nb2O5< TiO2< ZnO < SnO2. The SnO2 semiconductor ce ll showed the best light-to-electric conversion efficiency among the four s emiconductors.