Amorphous diamond-like carbon film prepared by pulsed laser deposition with application of pulsed negative bias voltage

Citation
N. Matsuyama et al., Amorphous diamond-like carbon film prepared by pulsed laser deposition with application of pulsed negative bias voltage, J APPL PHYS, 89(3), 2001, pp. 1938-1941
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
89
Issue
3
Year of publication
2001
Pages
1938 - 1941
Database
ISI
SICI code
0021-8979(20010201)89:3<1938:ADCFPB>2.0.ZU;2-#
Abstract
Amorphous diamond-like carbon films were prepared by pulsed laser depositio n with a synchronized application of pulsed negative bias voltage to the su bstrate. A beam from a Nd:yttrium-aluminum-garnet laser (1064 nm) was radia ted to a graphite target at a laser fluence of 10 J/cm(2). The negative bia s voltage was changed from 0 to 10 kV at a repetition rate of 10 Hz. The fi lm was deposited on a Si (111) substrate at a chamber pressure of 5 x 10(-5 ) Torr for 120 min. The effects,of bias voltage on the structure of the fil m were discussed on the basis of the measured deposition rate, Raman spectr a, refractive index, dynamic hardness, and surface roughness. The effect of self-sputtering on deposition rate was observed at a negative bias voltage above 0.6 kV. The application of bias voltage increased the fraction of sp (3) configuration in the film and made the film surface smoother. In partic ular, the application of 3 kV gave the largest fraction of sp(3) bonding, a nd formed the hardest and smoothest film. Bias voltage above 5 kV, however, drastically reduced the hardness of the film. (C) 2001 American Institute of Physics.