Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition

Citation
K. Ueda et al., Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition, J APPL PHYS, 89(3), 2001, pp. 1790-1793
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
89
Issue
3
Year of publication
2001
Pages
1790 - 1793
Database
ISI
SICI code
0021-8979(20010201)89:3<1790:EGOTPC>2.0.ZU;2-W
Abstract
Transparent p-type conducting CuGaO2 thin films were prepared on alpha -Al2 O3 (001) single-crystal substrates by pulsed laser deposition. The films we re grown epitaxially on the substrates in an as-deposited state. X-ray pole figure analysis revealed that the films were composed of two types of epit axial grains, both with c axes oriented perpendicular to the surface and a axes rotated 60 degrees with respect to each other around the c axis. Obser vation of the CuGaO2 thin films by atomic force microscopy and high-resolut ion transmission electron microscopy substantiated this conclusion. The fil ms have high optical transparency (similar to 80%) in the visible region, a nd the energy gap of CuGaO2 for direct allowed transition was estimated to be 3.6 eV. p-type conductivity was confirmed by Seebeck and Hall measuremen ts. The electrical conductivity, carrier (positive hole) density, and Hall mobility of the films at room temperature were 6.3 x 10(-2) S cm(-1), 1.7 x 10(18) cm(-3), and 0.23 cm(2)V(-1) s(-1), respectively. (C) 2001 American Institute of Physics.