Raman studies on GaAs1-xBix and InAs1-xBix

Citation
P. Verma et al., Raman studies on GaAs1-xBix and InAs1-xBix, J APPL PHYS, 89(3), 2001, pp. 1657-1663
Citations number
26
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
89
Issue
3
Year of publication
2001
Pages
1657 - 1663
Database
ISI
SICI code
0021-8979(20010201)89:3<1657:RSOGAI>2.0.ZU;2-P
Abstract
The lattice vibrational properties of new semiconductor alloys, GaAs1-xBix and InAs1-xBix, are reported. These alloys, which were grown by metalorgani c vapor phase epitaxy technique, contain a small amount (1.2%-3.8%) of Bi. A detail Raman scattering study of these new alloys, which exhibit weak tem perature dependence of the band gap with increasing amount of Bi, is report ed here. Good crystalline quality and spatial homogeneity was confirmed usi ng micro-Raman technique. The alloys show ternary compound behavior, confir ming substitutional incorporation of Bi into the lattice site. New vibratio nal modes observed were assigned to GaBi-like and InBi-like modes. In addit ion, phonon-plasmon coupled modes and vibrational modes corresponding to Bi and As materials were also observed. Results are discussed to characterize these new alloys in detail. (C) 2001 American Institute of Physics.