Existence of a CuAu-I-type ordered structure in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells

Citation
Tw. Kim et al., Existence of a CuAu-I-type ordered structure in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells, J APPL PHYS, 89(4), 2001, pp. 2503-2505
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
89
Issue
4
Year of publication
2001
Pages
2503 - 2505
Database
ISI
SICI code
0021-8979(20010215)89:4<2503:EOACOS>2.0.ZU;2-2
Abstract
Selected area electron diffraction pattern (SADP) and transmission electron microscopy (TEM) measurements were carried out to investigate the ordered structures in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wel ls (MQWs). The SADP showed two sets of extra spots with asymmetrical intens ity, and the high-resolution TEM image showed doublet periodicity in the co ntrast of the (001) lattice planes. The results of the SADP and the TEM mea surements showed that a CuAu-I-type ordered structure was observed near the lattice-mismatched InxGa1-xAs/InyAl1-yAs heterointerfaces. This CuAu-I-typ e ordered structure had an antiphase boundary in the periodically regular I nxGa1-xAs/InyAl1-yAs lattice-mismatched region. The existence of a CuAu-I-t ype ordered structure in InxGa1-xAs/InyAl1-yAs MQWs might originate from th e lattice mismatch between the InxGa1-xAs and the InyAl1-yAs layers. These results provide important information on the microstructural properties for improving operating efficiencies in long-wavelength optoelectronic devices , such as strain compensated electroabsorption modulators utilizing lattice -mismatched InxGa1-xAs/InyAl1-yAs MQWs. (C) 2001 American Institute of Phys ics.