Microstructural and photoluminescence studies of germanium nanocrystals inamorphous silicon oxide films

Citation
Wk. Choi et al., Microstructural and photoluminescence studies of germanium nanocrystals inamorphous silicon oxide films, J APPL PHYS, 89(4), 2001, pp. 2168-2172
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
89
Issue
4
Year of publication
2001
Pages
2168 - 2172
Database
ISI
SICI code
0021-8979(20010215)89:4<2168:MAPSOG>2.0.ZU;2-R
Abstract
Ge nanocrystal growth in amorphous silicon oxide film was studied using the transmission electron microscopy and x-ray photoelectron spectroscopy tech niques. The as-sputtered sample contained mainly GeO2 and Ge suboxides. GeO 2 and/or suboxides dissociate when rapid thermal annealed and provide Ge fo r nanocrystal formation. Nanocrystals of similar size (similar to 60 Angstr om in diameter) were obtained when annealed at 800 degreesC. Nanocrystals w ith diameters of 200-280 Angstrom consisting of multiple twin structures ne ar the Si-SiO2 interface were observed when annealed at 1000 degreesC. The twin structure was attributed to the enhanced diffusion of Ge at 1000 degre esC and the short annealing time. Our photoluminescence (PL) results show t hat the best PL response was obtained with samples that exhibit uniform nan ocrystal size. (C) 2001 American Institute of Physics.