Postnucleation surface transport-kinetical phenomena and morphological instability in film deposition from vapor

Citation
Oa. Louchev et al., Postnucleation surface transport-kinetical phenomena and morphological instability in film deposition from vapor, J APPL PHYS, 89(4), 2001, pp. 2151-2159
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
89
Issue
4
Year of publication
2001
Pages
2151 - 2159
Database
ISI
SICI code
0021-8979(20010215)89:4<2151:PSTPAM>2.0.ZU;2-I
Abstract
The problem of transition of the postnucleation surface profile to continuo us growth in the chemical vapor deposition process is considered. The devel oped numerical model includes a comprehensive set of transport-kinetical ph enomena ongoing on the growth interface taking into account the effect of s urface self-shadowing from the impinging species feeding the growth. This e ffect takes place when the characteristic length scale of surface profiles provided by the nucleation stage is lower than the free mean path of the ga s species. The effect is shown to be able to destabilize the surface morpho logy in cases when the surface concentration is held far from the adsorptio n-desorption equilibrium and the surface profile length provided by the nuc leation stage is considerably larger than the surface diffusion length of t he growth species. Conditions under which the postnucleation surface smooth ing may take place are specified. Experimentally feasible steps for postnuc leation surface smoothing are discussed. (C) 2001 American Institute of Phy sics.