Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts

Citation
C. Rivas et al., Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts, APPL PHYS L, 78(6), 2001, pp. 814-816
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
78
Issue
6
Year of publication
2001
Pages
814 - 816
Database
ISI
SICI code
0003-6951(20010205)78:6<814:FSOIPA>2.0.ZU;2-1
Abstract
Full-band simulations of indirect, phonon assisted, interband tunneling are used to calculate the current-voltage response of a low-temperature molecu lar-beam-epitaxy-grown silicon tunnel diode with delta-doped contacts. Elec tron confinement in the contacts results in weak structure in the current-v oltage characteristic. The structure is lost when finite lifetime effects a re included. The approach uses the nonequilibrium Green function formalism in a second-neighbor sp3s* planar orbital basis. (C) 2001 American Institut e of Physics.