Full-band simulations of indirect, phonon assisted, interband tunneling are
used to calculate the current-voltage response of a low-temperature molecu
lar-beam-epitaxy-grown silicon tunnel diode with delta-doped contacts. Elec
tron confinement in the contacts results in weak structure in the current-v
oltage characteristic. The structure is lost when finite lifetime effects a
re included. The approach uses the nonequilibrium Green function formalism
in a second-neighbor sp3s* planar orbital basis. (C) 2001 American Institut
e of Physics.