Defect and electronic structures in TiSi2 thin films produced by co-sputtering part 1: Defect analysis by transmission electron microscopy

Citation
H. Inui et al., Defect and electronic structures in TiSi2 thin films produced by co-sputtering part 1: Defect analysis by transmission electron microscopy, ACT MATER, 49(1), 2001, pp. 83-92
Citations number
30
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
ACTA MATERIALIA
ISSN journal
1359-6454 → ACNP
Volume
49
Issue
1
Year of publication
2001
Pages
83 - 92
Database
ISI
SICI code
1359-6454(20010108)49:1<83:DAESIT>2.0.ZU;2-8
Abstract
Phase transformation and defect structures in thin-film TiSi2 produced by c o-sputtering have been investigated as a function of annealing temperature by transmission electron microscopy. Metastable C49 crystallites nucleate f irst in the amorphous matrix from as low as 100 degreesC. This is due to th e lower surface energy of C49 crystallites arising from the similarity in e lectronic structure, chemical bonding and atomic density between the C49 an d amorphous modifications. All C49 crystallites contain numerous (010) faul ts, which are boundaries between two differently oriented domains related t o each other by a 90 degrees rotation about [010]. Stable C54 crystallites nucleate in the C49 matrix above 700 degreesC and most C54 crystallites con tain twins with the twin habit plane parallel to (001), which is perpendicu lar to the (110) twinning plane. Ternary additions to TiSi2 thin films to r educe the C49-->C54 transformation temperature are discussed on the basis o f the results from electron energy-loss spectroscopy (EELS) analyses descri bed in the companion paper. (C) 2001 Acta Materialia Inc. Published by Else vier Science Ltd. All rights reserved.