Photon band gap systems from semiconductor microcavities

Citation
Tl. Reinecke et al., Photon band gap systems from semiconductor microcavities, SYNTH METAL, 116(1-3), 2001, pp. 457-460
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
0379-6779 → ACNP
Volume
116
Issue
1-3
Year of publication
2001
Pages
457 - 460
Database
ISI
SICI code
0379-6779(20010115)116:1-3<457:PBGSFS>2.0.ZU;2-X
Abstract
A brief discussion of recent work on confined photon modes in semiconductor microcavities is given with an emphasis on comparison between experimental and theoretical results for these systems. Discrete photon modes whose ene rgies increase with decreasing cavity size are observed in single lithograp hically structured semiconductor microcavities. Coupled pairs of microcavit ies show a rich pattern of modes analogous to the bonding and antibonding e lectronic states of molecules. Chains of microcavities exhibit photon band gaps out to the fourth Brillouin zone edge of the chains. Published by Else vier Science B.V.