High hole mobility in the molecularly ordered oligosilanes

Citation
H. Okumoto et al., High hole mobility in the molecularly ordered oligosilanes, SYNTH METAL, 116(1-3), 2001, pp. 385-388
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
0379-6779 → ACNP
Volume
116
Issue
1-3
Year of publication
2001
Pages
385 - 388
Database
ISI
SICI code
0379-6779(20010115)116:1-3<385:HHMITM>2.0.ZU;2-8
Abstract
A single-dispersed oligosilane with a mesophase (smectic B) was utilized fo r fabricating molecularly ordered films. Their carrier transport properties were examined by the time-of-flight (TOF) transient photocurrent technique . In polycrystalline films of permethyldecasilane, molecular orientation al most parallel to bias electric field and a multi-layered structure were fou nd, possessing large domain size (>20 mu mm). This unique molecular order r esulted in non-dispersive TOF photocurrent with a clear plateau, whose hole mobility exceeded 1 x 10(-3) cm(2)/V s at 293 K, 1 x 10(5) V/cm. The high carrier mobility with small distribution can be ascribed to their well-orde red hopping sites. The unprecedented structure together with possible contr ol of hopping sites makes oligosilanes a new class of hole transport materi als. (C) 2001 Published by Elsevier Science B.V.