By rapid thermal processing of Cu/In/GaS precursors, good-quality CuIn1-xGa
x S-2 films are synthesized. By suppressing the formation of In-rich hilloc
ks, we could obtain homogeneous CuIn1-xGaxS2 surfaces. A conversion efficie
ncy of similar to 12% has been achieved using a relatively low(similar to1.
2) Cu/In ratio. (C) 2001 Elsevier Science B.V. All rights reserved.