Solar cells with Cu(In1-xGax)S-2 thin films prepared by sulfurization

Citation
T. Ohashi et al., Solar cells with Cu(In1-xGax)S-2 thin films prepared by sulfurization, SOL EN MAT, 67(1-4), 2001, pp. 225-230
Citations number
4
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
0927-0248 → ACNP
Volume
67
Issue
1-4
Year of publication
2001
Pages
225 - 230
Database
ISI
SICI code
0927-0248(200103)67:1-4<225:SCWCTF>2.0.ZU;2-T
Abstract
By rapid thermal processing of Cu/In/GaS precursors, good-quality CuIn1-xGa x S-2 films are synthesized. By suppressing the formation of In-rich hilloc ks, we could obtain homogeneous CuIn1-xGaxS2 surfaces. A conversion efficie ncy of similar to 12% has been achieved using a relatively low(similar to1. 2) Cu/In ratio. (C) 2001 Elsevier Science B.V. All rights reserved.