A. Yamamoto et al., Thermoelectric power and resistivity of HgBa2CuO4+delta over a wide dopingrange - art. no. 024504, PHYS REV B, 6302(2), 2001, pp. 4504
Thermoelectric power (TEP) and resistivity were systematically investigated
for HgBa2CuO4+delta (Hg-1201) with various doping levels from high underdo
ping to slight overdoping. Polycrystalline Hg-1201 samples were carefully p
repared from a mixture of HgO, BaO, and CuO. We paid particular attention t
o carbon impurity in the starting materials, resulting in a high-quality sa
mple. This enabled us to measure reliable transport properties. Assuming on
e characteristic temperature T* for each doping level, both the TEP and the
resistivity can be well scaled, as was reported in the other high-T-c supe
rconductors. The doping dependence of T's is in good agreement with that of
spin gap temperatures determined by NMR as well as that of the pseudogap t
emperatures reported in some other high-T-c superconductors.