Thermoelectric power and resistivity of HgBa2CuO4+delta over a wide dopingrange - art. no. 024504

Citation
A. Yamamoto et al., Thermoelectric power and resistivity of HgBa2CuO4+delta over a wide dopingrange - art. no. 024504, PHYS REV B, 6302(2), 2001, pp. 4504
Citations number
30
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
0163-1829 → ACNP
Volume
6302
Issue
2
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010101)6302:2<4504:TPAROH>2.0.ZU;2-U
Abstract
Thermoelectric power (TEP) and resistivity were systematically investigated for HgBa2CuO4+delta (Hg-1201) with various doping levels from high underdo ping to slight overdoping. Polycrystalline Hg-1201 samples were carefully p repared from a mixture of HgO, BaO, and CuO. We paid particular attention t o carbon impurity in the starting materials, resulting in a high-quality sa mple. This enabled us to measure reliable transport properties. Assuming on e characteristic temperature T* for each doping level, both the TEP and the resistivity can be well scaled, as was reported in the other high-T-c supe rconductors. The doping dependence of T's is in good agreement with that of spin gap temperatures determined by NMR as well as that of the pseudogap t emperatures reported in some other high-T-c superconductors.